PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON

被引：48

作者：

COHEN, SS

PIACENTE, PA

GILDENBLAT, G

BROWN, DM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：8856 / 8862

页数：7

相关论文

共 35 条

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS
ANDERSON, RM
REITH, TM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1337 - 1347
[2] ANDERSON RM, 1969, P ELECTRON MICROSCOP, P120
[3] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
LEPSELTER, MP
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +
[4] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
ANDREWS, JM
KOCH, FB
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 901 - &
[5] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY
ANDREWS, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984
[6] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES
BASTERFIELD, J
SHANNON, JM
GILL, A
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &
[7] CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &
[8] BEUHLER MG, 1976, NBS40022 SPEC PUBL
[9] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION
BINDELL, JB
COLBY, JW
WONSIDLER, DR
POATE, JM
CONLEY, DK
TISONE, TC
[J]. THIN SOLID FILMS, 1976, 37 (03) : 441 - 452
[10] BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878

← 1 2 3 4 →