LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING NI SILICIDE FORMATION

被引：32

作者：

OHDOMARI, I

AKIYAMA, M

MAEDA, T

HORI, M

TAKEBAYASHI, C

OGURA, A

CHIKYO, T

KIMURA, I

YONEDA, K

TU, KN

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] KYOTO UNIV,OSAKA,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NICKEL SILICON ALLOYS

引用

页码：2725 / 2728

页数：4

共 13 条

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[6] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].

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[10] REDISTRIBUTION OF AS DURING PD2SI FORMATION - ION CHANNELING MEASUREMENTS [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6781-6787

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