REDISTRIBUTION OF AS DURING PD2SI FORMATION - ION CHANNELING MEASUREMENTS

被引:36
作者
WITTMER, M [1 ]
TING, CY [1 ]
OHDOMARI, I [1 ]
TU, KN [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.330066
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6781 / 6787
页数:7
相关论文
共 19 条
[1]  
BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878
[2]  
BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[3]  
Chu WK., 1978, BACKSCATTERING SPECT
[4]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[5]   FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS [J].
EIZENBERG, M ;
FOELL, H ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :861-868
[6]   STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J].
FERTIG, DJ ;
ROBINSON, GY .
SOLID-STATE ELECTRONICS, 1976, 19 (05) :407-413
[7]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[8]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&
[9]   ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
MAYER, JW ;
ERIKSSON, L ;
PICRAUX, ST ;
DAVIES, JA .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&
[10]   LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].
OHDOMARI, I ;
TU, KN ;
SUGURO, K ;
AKIYAMA, M ;
KIMURA, I ;
YONEDA, K .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1015-1017