FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS

被引：30

作者：

EIZENBERG, M ^{[1
]}

FOELL, H ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：861 / 868

页数：8

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[4] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
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[6] FOELL H, UNPUBLISHED
[7] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
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[J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +
[8] SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON
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TU, KN
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 205 - 208
[9] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS
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TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859
[10] PARALLEL SILICIDE CONTACTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3735 - 3739