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FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS
被引:30
作者
:
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
EIZENBERG, M
[
1
]
FOELL, H
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FOELL, H
[
1
]
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 02期
关键词
:
D O I
:
10.1063/1.328850
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:861 / 868
页数:8
相关论文
共 20 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
CANALI, C
CATELLANI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
CATELLANI, C
PRUDENZIATI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
PRUDENZIATI, M
WADLIN, WH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
WADLIN, WH
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
EVANS, CA
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(01)
: 43
-
45
[3]
SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
EIZENBERG, M
FOLL, H
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FOLL, H
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(06)
: 547
-
549
[4]
EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
EIZENBERG, M
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
OTTAVIANI, G
TU, KN
论文数:
0
引用数:
0
h-index:
0
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 87
-
89
[5]
EIZENBERG M, UNPUBLISHED
[6]
FOELL H, UNPUBLISHED
[7]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 507
-
+
[8]
SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON
KRITZINGER, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KRITZINGER, S
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 205
-
208
[9]
SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MAYER, JW
LAU, SS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LAU, SS
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(09)
: 5855
-
5859
[10]
PARALLEL SILICIDE CONTACTS
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OHDOMARI, I
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(07)
: 3735
-
3739
←
1
2
→
共 20 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
CANALI, C
CATELLANI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
CATELLANI, C
PRUDENZIATI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
PRUDENZIATI, M
WADLIN, WH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
WADLIN, WH
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA,INST FIS,I-41100 MODENA,ITALY
EVANS, CA
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(01)
: 43
-
45
[3]
SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
EIZENBERG, M
FOLL, H
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FOLL, H
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(06)
: 547
-
549
[4]
EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
EIZENBERG, M
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
OTTAVIANI, G
TU, KN
论文数:
0
引用数:
0
h-index:
0
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 87
-
89
[5]
EIZENBERG M, UNPUBLISHED
[6]
FOELL H, UNPUBLISHED
[7]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 507
-
+
[8]
SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON
KRITZINGER, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KRITZINGER, S
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 205
-
208
[9]
SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MAYER, JW
LAU, SS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LAU, SS
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(09)
: 5855
-
5859
[10]
PARALLEL SILICIDE CONTACTS
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OHDOMARI, I
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(07)
: 3735
-
3739
←
1
2
→