SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS

被引：14

作者：

EIZENBERG, M ^{[1
]}

FOLL, H ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：547 / 549

页数：3

相关论文

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[2] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
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[4] FOLL H, UNPUBLISHED
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6316 - 6320
[8] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS
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[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287
[9] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[10] SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447