LOW-TEMPERATURE DOPING OF ARSENIC ATOMS IN SILICON DURING PD2SI FORMATION

被引：11

作者：

OHDOMARI, I

SUGURO, K

AKIYAMA, M

MAEDA, T

TU, KN

KIMURA, I

YONEDA, K

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] KYOTO UNIV,RES REACTOR INST,OSAKA,JAPAN

来源：

THIN SOLID FILMS | 1982年 / 89卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90307-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：349 / 353

页数：5

共 6 条

[1]

MAYER JW, 1970, ION IMPLANTATION SEM, P183

[2] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].

OHDOMARI, I ;

TU, KN ;

SUGURO, K ;

AKIYAMA, M ;

KIMURA, I ;

YONEDA, K .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1015-1017

[3] ION-BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES [J].

OHDOMARI, I ;

TU, KN ;

HAMMER, W .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3) :1-5

[4] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[5]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[6] REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION [J].

WITTMER, M ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5827-5834

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