Effects of plasma etching on DLC films

被引:27
作者
Massi, M
Mansano, RD
Maciel, HS
Otani, C
Verdonck, P
Nishioka, LNBM
机构
[1] EPUSP, PEE, LSI, BR-05508900 Sao Paulo, Brazil
[2] CTA, ITA, Dept Fis, LPPM, BR-12228 Sao Jose Dos Campos, SP, Brazil
关键词
diamond; etching; plasma processing and deposition; Raman scattering;
D O I
10.1016/S0040-6090(98)01691-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetron sputtered diamond like carbon (DLC) films were etched in oxygen reactive ion etching (RIE) plasmas. The hydrogenated films etch 35% slower than the non-hydrogenated films. Etch rates increase with power. The anisotropy decreases with both pressure and power. Processes at 6.5 Pa yield anisotropies of over 0.9, with etch rates up to 185 nm/min for the hydrogenated films. Raman analysis indicates that these oxygen RIE processes etch preferentially non-crystalline carbon atoms in the hydrogenated films, the remaining film has more sp bound carbon atoms than the original DLC film. This phenomenon occurs in a much lesser degree for the non-hydrogenated films, and Raman analysis indicates that the sp(2)-bound carbon atoms etch at approximately the same rate as the non-crystalline bound atoms. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:381 / 384
页数:4
相关论文
共 11 条
[1]  
CATHERINE Y, 1991, NATO ADV SCI I B-PHY, V266, P193
[2]   Novel low k dielectrics based on diamondlike carbon materials [J].
Grill, A ;
Patel, V ;
Jahnes, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (05) :1649-1653
[3]   Hydrogen-free amorphous carbon films: Correlation between growth conditions and properties [J].
Lifshitz, Y .
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) :388-400
[4]   Anisotropic reactive ion etching in silicon, using a graphite electrode [J].
Mansano, RD ;
Verdonck, P ;
Maciel, HS .
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 65 (2-3) :180-186
[5]  
MASSI M, 1998, IN PRESS INT C MICR
[6]   COMPRESSIVE-STRESS-INDUCED FORMATION OF THIN-FILM TETRAHEDRAL AMORPHOUS-CARBON [J].
MCKENZIE, DR ;
MULLER, D ;
PAILTHORPE, BA .
PHYSICAL REVIEW LETTERS, 1991, 67 (06) :773-776
[7]   RAMAN-SCATTERING CHARACTERIZATION OF CARBON BONDING IN DIAMOND AND DIAMONDLIKE THIN-FILMS [J].
NEMANICH, RJ ;
GLASS, JT ;
LUCOVSKY, G ;
SHRODER, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (03) :1783-1787
[8]   Characterization of ion-beam-deposited diamond-like carbon films [J].
Palshin, V ;
Meletis, EI ;
Ves, S ;
Logothetidis, S .
THIN SOLID FILMS, 1995, 270 (1-2) :165-172
[9]   Reactive ion etching of ion-plated carbon films [J].
Popova, K .
VACUUM, 1997, 48 (7-9) :681-684
[10]   DIAMONDLIKE AMORPHOUS-CARBON FILMS PREPARED BY MAGNETRON SPUTTERING OF GRAPHITE [J].
SAVVIDES, N ;
WINDOW, B .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2386-2390