Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

被引：69

作者：

Maier, Markus ^{[1
]}

Koehler, Klaus ^{[1
]}

Kunzer, Michael ^{[1
]}

Pletschen, Wilfried ^{[1
]}

Wagner, Joachim ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

aluminium compounds; current density; dislocation density; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; nucleation; wide band gap semiconductors; EFFICIENCY;

D O I：

10.1063/1.3073860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonthermal rollover (or efficiency droop) of the electroluminescence (EL) efficiency has been investigated for near-UV-emitting (AlGaIn)N single-well light-emitting diodes (LED) with varying GaInN well widths grown on substrates with different dislocation densities (DDs). For each DD the well width of the mesa-LEDs has been optimized for maximum EL efficiency at high operating currents. LEDs on freestanding GaN (DD 4x10(7) cm(-2)) with an 18 nm thick GaInN wide-well active region show the highest efficiency, and the output power-versus-current characteristic remains linear up to the highest pulsed current density of 750 A/cm(2). In contrast, LEDs on sapphire grown with conventional low-temperature nucleation (DD 10(9) cm(-2)) exhibit the optimum well width at 3 nm and show significant nonthermal rollover.

引用

页数：3

共 15 条

[1] Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
Akita, Katsushi
Kyono, Takashi
Yoshizumi, Yusuke
Kitabayashi, Hiroyuki
Katayama, Koji
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[2] Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.
Kunzer, M.
Schmidt, R.
Liu, S.
Pletschen, W.
Schlotter, P.
Koehler, K.
Kaufmann, U.
Wagner, J.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (04): : 1018 - 1024
[3] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
Gardner, N. F.
Mueller, G. O.
Shen, Y. C.
Chen, G.
Watanabe, S.
Gotz, W.
Krames, M. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (24)
[4] On the importance of radiative and Auger losses in GaN-based quantum wells
Hader, J.
Moloney, J. V.
Pasenow, B.
Koch, S. W.
Sabathil, M.
Linder, N.
Lutgen, S.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (26)
[5] Härle V, 2003, PROC SPIE, V4996, P133, DOI 10.1117/12.476591
[6] Kaufmann U, 2001, PHYS STATUS SOLIDI A, V188, P143, DOI 10.1002/1521-396X(200111)188:1<143::AID-PSSA143>3.0.CO
[7] 2-0
[8] Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
Li, Y.-L.
Huang, R.
Lai, Y.-H.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
[9] Enhancement of (AIGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.
Koehler, K.
Kunzer, M.
Wiegert, J.
Liu, S.
Kaufmann, U.
Wagner, J.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2133 - 2135
[10] MONE, 2007, APPL PHYS LETT, V91, DOI DOI 10.1063/1.2801704

← 1 2 →