Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs

被引:13
作者
Baeumler, M. [1 ]
Kunzer, M. [1 ]
Schmidt, R. [1 ]
Liu, S. [1 ]
Pletschen, W. [1 ]
Schlotter, P. [1 ]
Koehler, K. [1 ]
Kaufmann, U. [1 ]
Wagner, J. [1 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 04期
关键词
D O I
10.1002/pssa.200674112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
UV-to-violet emitting (AlGaln)N LEDs have been investigated with respect to the temperature-dependence of the output power characteristics and non-thermal rollover of the quantum efficiency at higher current densities. Analyzing MOVPE grown LED chips emitting in the 377 to 428 run wavelength interval, the temperature sensitivity was found to increase and the output power to decrease with decreasing wavelength lambda for lambda < 400 nm. A sub-linear increase of the output power with increasing injection current even in the absence of any thermal effects, i.e. a non-thermal rollover of the quantum efficiency, was observed to be most pronounced for longer wavelength LEDs (lambda > 400 nm). Furthermore, the transient temperature rise after turn-on has been studied for differently packaged 377 nm LEDs, for which the temperature coefficient of the output power has been found to be particularly large. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1018 / 1024
页数:7
相关论文
共 17 条
[1]   Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J].
Chichibu, SF ;
Abare, AC ;
Minsky, MS ;
Keller, S ;
Fleischer, SB ;
Bowers, JE ;
Hu, E ;
Mishra, UK ;
Coldren, LA ;
DenBaars, SP ;
Sota, T .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :2006-2008
[2]   324 nm light emitting diodes with milliwatt powers [J].
Chitnis, A ;
Zhang, JP ;
Adivarahan, V ;
Shuai, W ;
Sun, J ;
Shatalov, M ;
Yang, JW ;
Simin, G ;
Khan, MA .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L450-L451
[3]   High brightness LEDs for general lighting applications using the new ThinGaN™-technology [J].
Haerle, V ;
Hahn, B ;
Kaiser, S ;
Weimar, A ;
Bader, S ;
Eberhard, F ;
Plössl, A ;
Eisert, D .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12) :2736-2739
[4]   Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement [J].
Hwang, WJ ;
Lee, TH ;
Kim, L ;
Shin, MW .
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, :2429-2432
[5]  
Krames MR, 2002, PHYS STATUS SOLIDI A, V192, P237, DOI 10.1002/1521-396X(200208)192:2<237::AID-PSSA237>3.0.CO
[6]  
2-I
[7]   Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures [J].
Kunzer, M. ;
Baeumler, M. ;
Koehler, K. ;
Leancu, C. -C. ;
Kaufmann, U. ;
Wagner, J. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01) :236-240
[8]   Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers [J].
Piprek, J ;
Farrell, R ;
DenBaars, S ;
Nakamura, S .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) :7-9
[9]  
Schwegler V, 1999, PHYS STATUS SOLIDI A, V176, P783, DOI 10.1002/(SICI)1521-396X(199911)176:1<783::AID-PSSA783>3.0.CO
[10]  
2-Z