324 nm light emitting diodes with milliwatt powers

被引：44

作者：

Chitnis, A ^{[1
]}

Zhang, JP ^{[1
]}

Adivarahan, V ^{[1
]}

Shuai, W ^{[1
]}

Sun, J ^{[1
]}

Shatalov, M ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 4B期

关键词：

UV LED; MQW; buffer; strain relief; AlGaN;

D O I：

10.1143/JJAP.41.L450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n(+)-Al0.2Ga0.8N buffer layers. The AlGaN buffer layers were deposited over sapphire using strain-relieving AlN/AlGaN superlattices. Pulsed powers as high as 4 mW were measured for a pump current of 900 mA.

引用

页码：L450 / L451

页数：2

共 13 条

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