Critical issues in AlxGa1-xN growth

被引：26

作者：

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

OPTICAL MATERIALS | 2002年 / 19卷 / 01期

关键词：

AlGaN; heteroepitaxial growth; epitaxial lateral growth; low-temperature interlayer;

D O I：

10.1016/S0925-3467(01)00222-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strain and defects are the most serious issues for the growth of AlGaN. In situ stress monitoring revealed that tensile stress originating from the lattice mismatch between AlGaN and GaN is modulated by doping with Si or Mg. A low-temperature (LT) AlN interlayer between AlGaN and GaN is found to reduce tensile stress during growth, and suppress the propagation of dislocations which have screw components. However, additional pure edge dislocations are generated at the LT interlayer. In addition to the LT interlayer, a trenched structure was used for lateral growth, thereby achieving crack-free AlGaN with low dislocation density. AlGaN-based multi-quantum wells (QWs) have been fabricated on low-dislocation-density AlGaN, the photoluminescence (PL) efficiency of which is comparable to that of GaInN-based QWs. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：219 / 222

页数：4

共 14 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE
AMANO, H
KITOH, M
HIRAMATSU, K
AKASAKI, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) : 1639 - 1641
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[4] Amano H., 1990, MAT RES SOC EXT ABS, P165
[5] Real-time stress evolution during Si1-xGex heteroepitaxy: Dislocations, islanding, and segregation
Floro, JA
Chason, E
Lee, SR
Twesten, RD
Hwang, RQ
Freund, LB
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (09) : 969 - 979
[6] GEHRKE T, 1999, MRS INT J NITRIDE SE
[7] HIRANO A, 2000, IN PRESS P IWN2000 N
[8] ITOH K, 1991, THESIS NAGOYA U NAGO
[9] Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN
Iwaya, M
Takeuchi, T
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B): : L316 - L318
[10] Microscopic investigation of Al0.43Ga0.57N on sapphire
Kashima, T
Nakamura, R
Iwaya, M
Katoh, H
Yamaguchi, S
Amano, H
Akasaki, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12B): : L1515 - L1518

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