Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate

被引：36

作者：

Otsuka, N ^{[1
]}

Tsujimura, A ^{[1
]}

Hasegawa, Y ^{[1
]}

Sugahara, G ^{[1
]}

Kume, M ^{[1
]}

Ban, Y ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Moriguchi, Osaka 5708501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 5B期

关键词：

gallium nitride; aluminum gallium nitride; ultraviolet; light-emitting diode; double heterostructure; sapphire;

D O I：

10.1143/JJAP.39.L445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature deep-ultraviolet emission has been observed from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure tight-emitting diodes (LEDs) on (0001)-oriented sapphire substrate. By introducing undoped barrier layers, which sandwich the active layer, the LED was operated at a peak emission wavelength of 339 nm with a narrow linewidth of 5.6 nm. The dependence of emission intensity on injection current suggests that the nonradiative recombination was suppressed and the diffusion current for the recombination process was dominant at the injection current of over 20 mA.

引用

页码：L445 / L448

页数：4

共 24 条

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