Variation of GaN valence bands with biaxial stress and quantification of residual stress

被引：49

作者：

Edwards, NV

Yoo, SD

Bremser, MD

Weeks, TW

Nam, OH

Davis, RF

Liu, H

Stall, RA

Horton, MN

Perkins, NR

Kuech, TF

Aspnes, DE

机构：

[1] EMCORE CORP,SOMERSET,NJ 08873

[2] UNIV WISCONSIN,DEPT CHEM ENGN,MADISON,WI 53706

[3] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 15期

关键词：

D O I：

10.1063/1.119089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature reflectance data on epitaxial GaN thin-him samples covering the widest range of tensile and compressive stress (-3.8-3.5 kbar) thus far explicitly show the nonlinear behavior of the B-A and C-A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as Delta(SO) = 17.0 +/- 1 meV with increased confidence. (C) 1997 American Institute of Physics.

引用

页码：2001 / 2003

页数：3

共 21 条

[1] THE ANALYSIS OF OPTICAL-SPECTRA BY FOURIER METHODS [J].