Direct observation of reaction-limited aggregation on semiconductor surfaces

被引：54

作者：

Chang, TC ^{[1
]}

Hwang, IS

Tsong, TT

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei 10764, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.83.1191

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a discovery that the nucleation and growth of two-dimensional (2D) Ge islands at a Pb layer covered Si(111) surface are reaction limited. Using scanning tunneling microscopy, a compact-to-fractal island shape transition is observed as the; deposition flux is lowered, the temperature is raised, or at a low Ge coverage. This behavior is completely opposite to what was predicted from those theories based on diffusion-limited aggregation and previous experimental observations. Energy barriers are found to exist for the nucleation and growth of Ge islands, indicating that their growth behavior is exchange-reaction rate limited.

引用

页码：1191 / 1194

页数：4

共 25 条

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