Wire-bond void formation during high temperature aging

被引：30

作者：

Chang, HS ^{[1
]}

Hsieh, KC

Martens, T

Yang, A

机构：

[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

[2] Philips Elect Bldg Elements Ind Ltd, Tech Dev Div, Kaohsiung, Taiwan

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2004年 / 27卷 / 01期

关键词：

electronic packaging; reliability; wire bonding;

D O I：

10.1109/TCAPT.2004.825752

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Voids formed in Au-Al intermetallic phases degrade the long-term reliability of gold wire bonds to aluminum pads. In this study, a series of microstructural studies were performed to evaluate void formation in wire bonds. Voids are classified as initial, annular or minute. Probe marks and Al pad contamination are the main causes of initial voids that block alloy diffusion and slow down intermetallic growth. Annular voids are caused by the ultrasonic squeeze effect of thermosonic wire bonding. These bonding gaps may become pathways for halide species that corrode and degrade wire bonds. Minute voids are formed during the Au4Al phase. The two A u(4)Al phase textures in these voids may be due to different Au4Al phase formation reactions or be related to grain boundary effects on the surface layer of the An ball.

引用

页码：155 / 160

页数：6

共 13 条

[1]

[Anonymous], 1992, P ASME JSME JOINT C

[2] Intermetallic growth of wire-bond at 175°C high temperature aging [J].

Chang, HS ;

Pon, JX ;

Hsieh, KC ;

Chen, CC .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (09) :1171-1177

[3]

Dittmer K, 1999, P SOC PHOTO-OPT INS, V3830, P403

[4]

HARMAN GG, 1997, WIRE BONDING MICROEL

[5] Effect of mold resin on reliability in gold-aluminum bonding [J].

Imasato, E ;

Araki, M ;

Shimizu, I ;

Ohno, Y .

2ND ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, PROCEEDINGS, 1998, :338-344

[6]

KHAN M, 1988, P 26 INT REL PHYS S, P40

[7]

Noolu N, 2002, P SOC PHOTO-OPT INS, V4931, P478

[8] Surface oxide films on Aluminum bondpads: Influence on thermosonic wire bonding behavior and hardness [J].

Petzold, M ;

Berthold, L ;

Katzer, D ;

Knoll, H ;

Memhard, D ;

Meier, P ;

Lang, KD .

MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) :1515-1520

[9] INTERMETALLIC FORMATION IN GOLD-ALUMINUM SYSTEMS [J].

PHILOFSKY, E .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1391-+

[10]

PHILOFSKY E, 1971, P IEEE REL PHYS S LA, P11

← 1 2 →