Ferroelectricity in thin perovskite films

被引：403

作者：

Tybell, T ^{[1
]}

Ahn, CH ^{[1
]}

Triscone, JM ^{[1
]}

机构：

[1] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the investigation of ferroelectricity in thin tetragonal single-crystalline perovskite films of Pb(Zr0.2Ti0.8)O-3 grown by off-axis rf magnetron sputtering. The local ferroelectric properties of atomically smooth films, with thicknesses ranging from a few unit cells to 800 Angstrom, were measured using a combination of electric force microscopy and piezoelectric microscopy. The time dependence of the measured signals reveals a stable ferroelectric polarization in films down to thicknesses of 40 Angstrom. (C) 1999 American Institute of Physics. [S0003-6951(99)01932-4].

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页码：856 / 858

页数：3

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