Thermoelectric properties of Sn-doped TiCoSb half-Heusler compounds

被引：86

作者：

Sekimoto, T ^{[1
]}

Kurosaki, K ^{[1
]}

Muta, H ^{[1
]}

Yamanaka, S ^{[1
]}

机构：

[1] Osaka Univ, Dept Nucl Engn, Grad Sch Engn, Div Sustainable Energy & Environm Engn, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2006年 / 407卷 / 1-2期

关键词：

half-Heusler compound; electrical resistivity; thermoelectric power; thermal conductivity;

D O I：

10.1016/j.jallcom.2005.06.036

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Half-Heusler compounds of Sn-doped TiCoSb "TiCoSnxSb1-x (x = 0.0, 0.01, and 0.05)" were prepared and their thermoelectric properties were measured above room temperature. From the EDX analysis, all the samples have three phases: the TiCoSnxSb1-x, Co-rich, and Ti-rich phases. The values of the thermoelectric power increase with Sn doping, and a positive thermoelectric power is obtained in the sample of TiCoSn0.05Sb0.95. The thermal conductivity decreases both with increasing temperature and with Sn content. The maximum value of ZT for p-type material is 0.030 at 988 K in the sample of TiCoSn0.05Sb0.95. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：326 / 329

页数：4

共 16 条

[1] GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].