Yttria-stabilized zirconia obtained by MOCVD: applications

被引：20

作者：

Garcia, G

Figueras, A

Casado, J

Llibre, J

Mokchah, M

Petot-Ervas, G

Calderer, J

机构：

[1] CSIC, ICMAB, Bellaterra 08193, Spain

[2] SE Carburos Metal, Barcelona 08038, Spain

[3] Ecole Cent Paris, Chim Phys Solide Lab, CNRS, URA 453, F-92295 Chatenay Malabry, France

[4] UPC, Dept Engn Elect Modul C4, Barcelona 08034, Spain

来源：

THIN SOLID FILMS | 1998年 / 317卷 / 1-2期

关键词：

YS2; electrodes; MOCVD;

D O I：

10.1016/S0040-6090(97)00622-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper deals with the preparation and characterization of YSZ layers obtained by MOCVD using Y(thd)(3) and Zr(thd)(4), where thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate, as organometallic precursors. Yttria-stabilized zirconia (YSZ) layers deposited on porous alumina covered with LaSrMnO3 electrodes were used as solid electrolytes. Electrical characterizations were carried out by Spectral Complex Impedance measurements on multilayer devices such as air/electrode/YSZ electrolyte/electrode/Al2O3 porous/air, showing very promising results. (C) 1998 Elsevier Science S.A.

引用

页码：241 / 244

页数：4

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