PREPARATION OF YBCO ON YSZ LAYERS DEPOSITED ON SILICON AND SAPPHIRE BY MOCVD - INFLUENCE OF THE INTERMEDIATE LAYER ON THE QUALITY OF THE SUPERCONDUCTING FILM

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships: (100) YSZ//(1-102) sapphire and (110) YSZ//(01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.