The effects of flux, fluence and temperature on amorphization in ion implanted semiconductors

The Avrami-Johnson-Mehl [P. C. Shewmon, Transformation in Metals (McGraw Hill, New York (1969)] approach to phase transformations is extended to include finite area amorphous zone nucleation or generation by ion impact onto semiconductors together with bombardment induced zone expansion and thermal annealing zone contraction (recrystallization) in order to predict the variation of amorphized material fraction with ion fluence. The ion flux and substrate temperature are found to play decisive roles in determining this variation. The model predictions are shown to agree qualitatively with currently available experimental data with respect to the system variables of ion flux, fluence, and substrate temperature. (C) 1996 American Institute of Physics.