GRAIN EVOLUTION IN 2-PHASE SYSTEMS

被引：9

作者：

CARTER, G

机构：

[1] Department of Electronic and Electrical Engineering, University of Salford, Salford

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1993年 / 68卷 / 05期

关键词：

D O I：

10.1080/01418619308219389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A modified version of transition state theory, which accounts for the division of the additional surface free energy density of a curved boundary between two adjacent phases, is developed. It is shown how this differs from, but relaxes to, the Gibbs-Thomson equation under appropriate conditions. The approach allows prediction of shrinkage of amorphous zones in crystalline matrices and growth of crystallites in amorphous matrices of semiconductors at temperatures lower and higher respectively than that for planar amorphous-crystal boundary motion. The changes in grain distribution with time at fixed temperatures are also examined.

引用

页码：1091 / 1095

页数：5

共 14 条

[1] ION-BOMBARDMENT-ENHANCED GRAIN-GROWTH IN GERMANIUM, SILICON, AND GOLD THIN-FILMS [J].