ION-INDUCED ANNEALING AND AMORPHIZATION OF ISOLATED DAMAGE CLUSTERS IN SI

被引：26

作者：

BATTAGLIA, A

PRIOLO, F

RIMINI, E

FERLA, G

机构：

[1] DIPARTIMENTO FIS,I-95129 CATANIA,ITALY

[2] SGS THOMSON,I-95100 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 26期

关键词：

D O I：

10.1063/1.102856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction between high-energy ion irradiation and pre-existing damage clusters dispersed in single-crystal Si is discussed. Silicon substrates were predamaged by low-dose 150 keV Au ions. Post-irradiation by 600 keV Kr 2+ ions resulted in either damage annealing or damage accumulation, depending on the substrate temperature. The transition temperature between these two different regimes is 420 K. These data are discussed and compared with the ion beam induced epitaxy and amorphization of continuous surface amorphous layers.

引用

页码：2622 / 2624

页数：3

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