THE INFLUENCE OF DOSE-RATE AND IMPLANTATION TEMPERATURE ON THE DAMAGE PRODUCED BY N+ ION IRRADIATION OF SILICON

被引：10

作者：

ALHASHMI, SAR

CARTER, G

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1987年 / 102卷 / 1-4期

关键词：

D O I：

10.1080/00337578708222908

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：83 / 93

页数：11

共 13 条

[1]

AHMED NAG, 1979, PHYSICS LETT A, V69

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ALHASHMI, SAR ;

CARTER, G .

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[3]

BOGH E, 1971, INT C ION IMPLANTATI

[4] THE INFLUENCE OF DOSE-RATE AND ANALYSIS PROCEDURES ON MEASURED DAMAGE IN P+ ION-IMPLANTED GAAS [J].

CARTER, G ;

NOBES, MJ ;

TASHLYKOV, IS .

RADIATION EFFECTS LETTERS, 1984, 85 (01) :37-43

[5]

Carter G., 1976, ION IMPLANTATION SEM

[6] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[7]

FREEMAN JH, 1970, P EURO C ION IMPLANT

[8]

LINNROS J, IN PRESS NUCL INSTR

[9]

QUEIZALS G, IN PRESS NUCL INSTR

[10] DISORDERS PRODUCED DURING HIGH-CURRENT AND HIGH-DOSE PHOSPHORUS ION-IMPLANTATION IN SILICON [J].

TAMURA, M ;

YAGI, K ;

NATSUAKI, N ;

MIYAO, M ;

TOKUYAMA, T .

APPLIED PHYSICS, 1979, 20 (03) :225-229

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