From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111):: Optical characterization

被引：23

作者：

Leroux, M ^{[1
]}

Lahrèche, H ^{[1
]}

Semond, F ^{[1
]}

Laügt, M ^{[1
]}

Feltin, E ^{[1
]}

Schnell, N ^{[1
]}

Beaumont, B ^{[1
]}

Gibart, P ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, FR-06560 Valbonne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

biaxial strain; luminescence; nitride heteroepitaxy; reflectivity;

D O I：

10.4028/www.scientific.net/MSF.353-356.795

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the optical properties of GaN grown on 6H-SiC and (111) Si and exhibiting tensile biaxial strains varying from nearly 0 up to 4.5x10(-3). The layers have been assessed by X-ray diffractometry (strain measurements), reflectivity and photoluminescence (PL) as a function of temperature. Excitonic GaN gaps as low as 3.42 eV at 10 K are reported. For strains higher than similar to1.5x10(-3), the low temperature PL is dominated by B-related donor bound excitons, though the B free exciton is not observed in sigma geometry, as expected from selection rules. Our results also point to a similar behavior for A and B related excitonic luminescence as a function of temperature.

引用

页码：795 / 798

页数：4

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