Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

被引：216

作者：

Kornitzer, K ^{[1
]}

Ebner, T

Thonke, K

Sauer, R

Krichner, C

Schwegler, V

Kamp, M

Leszczynski, M

Grzegory, I

Porowski, S

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Ulm, Abt Optoelekt, D-89069 Ulm, Germany

[3] Polish Acad Sci, High Pressure Res Ctr, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.60.1471

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on highly resolved photoluminescence (PL) and reflectance (RF) spectra of a homoepitaxial GaN layer grown by metal-organic vapor phase epitaxy. This sample exhibits narrow linewidths of several PL emission peaks, down to approximate to 100 mu eV full width at half maximum for some bound exciton transitions. As a consequence, we have detected new PL features as, e.g., a fivefold fine structure of the donor-bound exciton line at approximate to 3.471 eV, and other known PL transitions could be determined with high precision. In RF measurements, the extraordinary quality of the epitaxial layer allowed observation of weakly damped excitonic groundstate transitions and of narrow excited exciton transitions with high signal-to-noise ratio. [S0163-1829(99)14027-X].

引用

页码：1471 / 1473

页数：3

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