Dry etching of GaN substrates for high-quality homoepitaxy

被引：37

作者：

Schauler, M

Eberhard, F

Kirchner, C

Schwegler, V

Pelzmann, A

Kamp, M

Ebeling, KJ

Bertram, F

Riemann, T

Christen, J

Prystawko, P

Leszczynski, M

Grzegory, I

Porowski, S

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

[2] Otto Von Guericke Univ, Inst Expt Phys, D-39016 Magdeburg, Germany

[3] Unipress, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.123463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mirror-like surface without trenches, scratches, or holes. A dramatic increase of crystal quality is determined by low-temperature cathodoluminescence (CL). Compared to not CAIBE-treated material, the CL intensity is improved by a factor of 1000 and the linewidth is ten times narrower. (C) 1999 American Institute of Physics. [S0003-6951(99)02608-X].

引用

页码：1123 / 1125

页数：3

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