Blue light-emitting diodes on GaN substrates, growth and characterization

Light-emitting diodes have been grown on GaN single crystals using metalorganic vapor phase epitaxy. The homojunction devices were characterized by electroluminescence, photoluminescence and I-V measurements. Intense, single-peak electroluminescence is obtained at 420 nm wavelength, which is attributed to transitions in the p-type GaN underpinned by photoluminescence measurements. The electrical and optical device performance compares favorable to homotype pn-junctions grown on sapphire using identical conditions for growth and characterization. The homoepitaxial light-emitting diodes are twice as bright as the heteroepitaxial devices. (C) 1998 Elsevier Science B.V. All rights reserved.