Nucleation on antiphase boundaries on Si(001)

被引：6

作者：

Bowler, DR ^{[1
]}

Goringe, CM ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.58.3937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antiphase boundaries (APB's) form between islands on the silicon(001) surface during epitaxial growth. They are known to be nucleation sites for new layers of silicon, and hence play a key role in the growth process. We have modelled different possible structures of APB's to determine stable structures and the kinking energy of the two lowest-energy structures. We also show the stability of dimer strings on an APE relative to the same strings on the clean surface, and explain why islands are found to nucleate on an APE when they do not on the clean surface during growth.

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页码：3937 / 3940

页数：4

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