Electron spindynamics in InGaAs quantum wells

被引:9
作者
Morita, K [1 ]
Sanada, H [1 ]
Matsuzaka, S [1 ]
Hu, CY [1 ]
Ohno, Y [1 ]
Ohno, H [1 ]
机构
[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
关键词
electron spin; InGaAs/AlGaAs QWs; spin relaxation; electron g-factor;
D O I
10.1016/j.physe.2003.11.160
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electron spin dynamics in strained In0.1Ga0.9As/Al0.4Ga0.6As quantum wells (QWs) on (100) and (110)-oriented substrates are investigated by time-resolved Faraday rotation. We find that the spin relaxation time in (I 10) QWs is 6 times longer than that in (100) QWs, at low temperatures, which is strongly reduced-by applying magnetic fields. The sign of g-factor is found positive and its magnitude decreases with increasing well width, in the well width range investigated here. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:1007 / 1011
页数:5
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