Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing

被引：47

作者：

Xu, M. ^{[1
]}

Xu, S.

Chai, J. W.

Long, J. D.

Ee, Y. C.

机构：

[1] Sichuan Normal Univ, Inst Solid State Phys, Lab Low Dimens Struct Phys, Chengdu 610068, Peoples R China

[2] Nanyang Technol Univ, NIE, Palsma Sources & Applicat Ctr, Singapore 637616, Singapore

[3] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

D O I：

10.1063/1.2408662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a simple method to significantly enhance the photoluminescence (PL) of SiNx films by incorporating a SiO2 buffer and annealing treatment under N-2 protection. Strong visible PL is achieved with annealing temperature above 650 degrees C. Optimal PL is obtained at 800 degrees C. The composition and structure analysis reveal that strong PL is directly related to the content of the Si-O and Si-N bonds in the SiNx films. These bonds provide effective luminescent centers and passivate the interface between Si core and the surrounding oxide. (c) 2006 American Institute of Physics.

引用

页数：3

共 21 条

[1] An annealing study of luminescent amorphous silicon-rich silicon oxynitride thin films [J].