Surface core-level shifts of the polar semiconductor Cd(Zn)Te(100)

被引：12

作者：

Heske, C ^{[1
]}

Winkler, U ^{[1
]}

Held, G ^{[1
]}

Fink, R ^{[1
]}

Umbach, E ^{[1
]}

Jung, C ^{[1
]}

Bressler, PR ^{[1
]}

Hellwig, C ^{[1
]}

机构：

[1] BESSY GMBH,D-14195 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.56.2070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The termination of polar Cd(Zn)Te(100) surfaces is derived from an investigation of the surface core-level shifts in soft x-ray photoemission spectra of the Cd and Te 3d(5/2) levels, leading to two groups of results. First, different surface preparations (i.e., sputter treatment and annealing under Cd flux, Te flux, or in ultrahigh vacuum) of Cd(Zn)Te single crystals result in clean. stoichiometric, and well-ordered surfaces. The influence of these preparations on reconstructions, surface core-level shifts, and in particular on the surface termination is demonstrated, deducing adequate conditions for a deliberate choice of the terminating atomic species. Second, the derived surface core-level shifts are discussed in view of photoelectron diffraction effects upon the variation of the detection angle and the photon energy of the synchrotron radiation, as well as in view of theoretical and experimental results for surface core-level shifts of different compound semiconductors.

引用

页码：2070 / 2078

页数：9

共 45 条

[1] SURFACE CORE-LEVEL SHIFTS AND RELAXATION OF GROUP-IVA-ELEMENT CHALCOGENIDE SEMICONDUCTORS
ALLAN, G
[J]. PHYSICAL REVIEW B, 1991, 43 (12): : 9594 - 9598
[2] SURFACE TERMINATION OF EPITAXIAL NIAL ON GAAS(001) BY X-RAY PHOTOELECTRON DIFFRACTION
CHAMBERS, SA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2062 - 2067
[3] SURFACE TERMINATION OF EPITAXIAL NIAL ON GAAS(001) BY HIGH-ANGULAR-RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION
CHAMBERS, SA
[J]. PHYSICAL REVIEW B, 1990, 42 (17): : 10865 - 10872
[4] ZNSE(100) SURFACE - ATOMIC CONFIGURATIONS, COMPOSITION, AND SURFACE DIPOLE
CHEN, W
KAHN, A
SOUKIASSIAN, P
MANGAT, PS
GAINES, J
PONZONI, C
OLEGO, D
[J]. PHYSICAL REVIEW B, 1994, 49 (15): : 10790 - 10793
[5] ZNSE(100) - THE SURFACE AND THE FORMATION OF SCHOTTKY BARRIERS WITH AL AND AU
CHEN, W
KAHN, A
SOUKIASSIAN, P
MANGAT, PS
GAINES, J
PONZONI, C
OLEGO, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2639 - 2645
[6] CORE-LEVEL BINDING-ENERGY AND DENSITY OF STATES FROM SURFACE ATOMS OF GOLD
CITRIN, PH
WERTHEIM, GK
BAER, Y
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1425 - 1428
[7] Stoichiometry determination of the Te-rich (100)CdTe and (100)ZnTe surfaces
Daudin, B
BrunLeCunff, D
Tatarenko, S
[J]. SURFACE SCIENCE, 1996, 352 : 99 - 104
[8] (111)CDTE SURFACE-STRUCTURE - A STUDY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND X-RAY PHOTOELECTRON DIFFRACTION
DUSZAK, R
TATARENKO, S
CIBERT, J
SAMINADAYAR, K
DESHAYES, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (06): : 3025 - 3030
[9] PHOTOEMISSION-STUDIES OF SURFACE CORE-LEVEL SHIFTS AND THEIR APPLICATIONS
EASTMAN, DE
HIMPSEL, FJ
VANDERVEEN, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 609 - 616
[10] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

← 1 2 3 4 5 →