Investigation of strain in microstructures by a novel moire method

被引:17
作者
Li, B
Xie, HM
Xu, B
Geer, R
Castracane, J
机构
[1] SUNY Albany, Albany NanoTech, Albany, NY 12203 USA
[2] Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China
关键词
focused ion beam; moire; nanomachining; strain;
D O I
10.1109/JMEMS.2002.805044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A focused ion beam (FIB) moire method is proposed and demonstrated to measure the strain in microstructures. This technique is based on the advantages of the FIB system in nanofabrication, imaging, selective deposition, and fine adjustment. A nanograting is directly written on the top of the microstructures by ion milling without the requirement of an etch mask. The FIB moire pattern is formed by the interference between a prepared specimen grating and FIB raster scan lines. The strain of the microstructures is derived by calculating the average spacing of moire fringes. The sensitivity and accuracy of FIB moire in strain measurement is subsequently discussed. Since the local strain of a microstructure itself can be monitored during the process, the FIB moire technique has many potential applications in the mechanical metrology of microelectromechanical systems (MEMS). As an example, the strain distribution along the sticking microstructures and the contribution of surface oxidization and mass loading to the cantilever strain is determined by this FIB moire technique.
引用
收藏
页码:829 / 836
页数:8
相关论文
共 25 条
[1]  
BAKER MS, 2001, SOC EXP MECH ANN C E
[2]  
BRITTON CL, 1999, P 1999 S ADV RES VLS
[3]   Notch formation by stress enhanced spontaneous etching of polysilicon [J].
Chang, JP ;
Sawin, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1870-1873
[4]  
CHIANG FP, 1989, MANUAL EXPT STRESS A, pCH7
[5]  
FAN LS, 1990, P IEEE MICR SYST WOR, V177
[6]   Bent-beam strain sensors [J].
Gianchandani, YB ;
Najafi, K .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1996, 5 (01) :52-58
[7]   A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].
GUCKEL, H ;
RANDAZZO, T ;
BURNS, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675
[8]  
GUCKEL H, 1988, IEEE SOL STAT SENS A, V96
[9]  
KIM CJ, 1993, SENS MATER, V4, P291
[10]  
Kuball M, 1999, PHYS STATUS SOLIDI A, V176, P355, DOI 10.1002/(SICI)1521-396X(199911)176:1<355::AID-PSSA355>3.0.CO