Preparation and properties of multilayer Pb(Zr,Ti)O3/PbTiO3 thin films for pyroelectric application

被引:88
作者
Liu, WG [1 ]
Ko, JS [1 ]
Zhu, WG [1 ]
机构
[1] Nanyang Technol Univ, Sch EEE, Sensors & Actuators Lab, Ctr Microelect, Singapore 639798, Singapore
关键词
multilayers; pyroelectricity; dielectric properties; sensors;
D O I
10.1016/S0040-6090(00)01012-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To develop a high performance pyroelectric infrared (IR) detector, Pb-1.1(Zr0.3Ti0.7)O-3/PbTiO3 (PZT/PT) multilayer thin films were deposited onto the top of a Pt/Ti/Si3N4/SiO2 membrane by a modified sol-gel process. For the comparison purpose, Pb-1.1(Zr0.3Ti0.7)O-3 (PZT) thin films were also prepared with the identical method under same conditions. X-Ray diffraction measurement revealed that the diffraction pattern of the multilayer film was the superimposition of the PZT and PT patterns. At 1 kHz, dielectric constant of 389 and 558, dielectric loss of 1.2 and 1.1% were obtained, respectively, for the PZT/PT and PZT thin films. The PZT/PT film showed a lower dielectric constant as expected and a similar dielectric loss compared with those of the PZT film, which is beneficial to use the multilayer thin films as the pyroelectric IR detecting element. Pyroelectric coefficients for the PZT/PT film and the PZT film were correspondingly 380 and 400 mu C/m(2) K. Calculated detectivity figures of merit for the PZT/PT and PZT thin films were 20.3 x 10(-6) Pa-1/2, and 18.7 x 10(-6) Pa-1/2, and values of the voltage response figures of merit were 0.038 m(2)/C and 0.028 m(2)/C, respectively. At 20 Hz, the dynamic pyroelectric voltage responsivity of 132 V/W (in rms) was obtained for the PZT/PT film and 98 V/W (in rms) for PZT film with the same element size of 240 X 360 mu m(2). High response of the multilayer thin film was ascribed to its relatively lower dielectric constant when compared to the PZT thin films. Experimental results showed the PZT/PT multilayer thin film is a good candidate material for developing high performance IR detectors. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:254 / 258
页数:5
相关论文
共 11 条
[1]   PYROELECTRIC COEFFICIENT DIRECT MEASUREMENT TECHNIQUE AND APPLICATION TO A NSEC RESPONSE TIME DETECTOR [J].
BYER, RL ;
ROUNDY, CB .
FERROELECTRICS, 1972, 3 (2-3-) :333-&
[2]   ELECTRICAL-PROPERTIES MAXIMA IN THIN-FILMS OF THE LEAD ZIRCONATE LEAD TITANATE SOLID-SOLUTION SYSTEM [J].
CHEN, HD ;
UDAYAKUMAR, KR ;
GASKEY, CJ ;
CROSS, LE .
APPLIED PHYSICS LETTERS, 1995, 67 (23) :3411-3413
[3]  
HYUN J, 1999, APPL PHYS LETT, V75, P130
[4]   Effect of PbTiO3 seeding layer on the growth of sol-gel-derived Pb(Zr0.53Ti0.47)O3 thin film [J].
Ishikawa, K ;
Sakura, K ;
Fu, D ;
Yamada, S ;
Suzuki, H ;
Hayashi, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5128-5131
[5]   Processing and properties of thin film pyroelectric devices [J].
Kohli, M ;
Huang, Y ;
Maeder, T ;
Wuethrich, C ;
Bell, A ;
Muralt, P ;
Setter, N ;
Ryser, P ;
Forster, M .
MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) :93-96
[6]   Pyroelectric thin-film sensor array [J].
Kohli, M ;
Wuethrich, C ;
Brooks, K ;
Willing, B ;
Forster, M ;
Muralt, P ;
Setter, N ;
Ryser, P .
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 60 (1-3) :147-153
[7]  
LIU W, 1994, FERROELECTRICS, V154, P313
[8]  
Patel A, 1995, GEC-J RES, V12, P141
[9]   Solution deposition of ferroelectric thin films [J].
Tuttle, BA ;
Schwartz, RW .
MRS BULLETIN, 1996, 21 (06) :49-54
[10]   PYROELECTRIC DEVICES AND MATERIALS [J].
WHATMORE, RW .
REPORTS ON PROGRESS IN PHYSICS, 1986, 49 (12) :1335-1386