Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure

被引：1092

作者：

Kubota, Yoichi ^{[1
]}

Watanabe, Kenji ^{[1
]}

Tsuda, Osamu ^{[1
]}

Taniguchi, Takashi ^{[1
]}

机构：

[1] NIMS, Tsukuba, Ibaraki 3050044, Japan

来源：

SCIENCE | 2007年 / 317卷 / 5840期

关键词：

D O I：

10.1126/science.1144216

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Materials emitting light in the deep ultraviolet region around 200 nanometers are essential in a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be a promising deep ultraviolet light emitter, has traditionally been synthesized under high pressure and at high temperature. We successfully synthesized high-purity hBN crystals at atmospheric pressure by using a nickel-molybdenum solvent. The obtained hBN crystals emitted intense 215-nanometer luminescence at room temperature. This study demonstrates an easier way to grow high-quality hBN crystals, through their liquid-phase deposition on a substrate at atmospheric pressure.

引用

页码：932 / 934

页数：3

共 25 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].