UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires

被引:134
作者
Gao, J. [1 ]
Chen, R. [1 ]
Li, D. H. [1 ]
Jiang, L. [2 ]
Ye, J. C. [3 ]
Ma, X. C. [3 ]
Chen, X. D. [2 ]
Xiong, Q. H. [1 ]
Sun, H. D. [1 ]
Wu, T. [1 ]
机构
[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[3] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Guangdong, Peoples R China
基金
新加坡国家研究基金会;
关键词
CRYSTALLINE IN2O3 NANOWIRES; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; THIN-FILMS; ELECTRICAL-PROPERTIES; POLYCRYSTALLINE ZNO; EPITAXIAL-GROWTH; SOLAR-CELLS; PHOTOLUMINESCENCE; SUBSTRATE;
D O I
10.1088/0957-4484/22/19/195706
中图分类号
TB3 [工程材料学];
学科分类号
082905 [生物质能源与材料];
摘要
Multifunctional single crystalline tin-doped indium oxide (ITO) nanowires with tuned Sn doping levels are synthesized via a vapor transport method. The Sn concentration in the nanowires can reach 6.4 at.% at a synthesis temperature of 840 degrees C, significantly exceeding the Sn solubility in ITO bulks grown at comparable temperatures, which we attribute to the unique feature of the vapor-liquid-solid growth. As a promising transparent conducting oxide nanomaterial, layers of these ITO nanowires exhibit a sheet resistance as low as 6.4 Omega/square and measurements on individual nanowires give a resistivity of 2.4 x 10(-4) Omega cm with an electron density up to 2.6 x 10(20) cm(-3), while the optical transmittance in the visible regime can reach similar to 80%. Under the ultraviolet excitation the ITO nanowire samples emit blue light, which can be ascribed to transitions related to defect levels. Furthermore, a room temperature ultraviolet light emission is observed in these ITO nanowires for the first time, and the exciton-related radiative process is identified by using temperature-dependent photoluminescence measurements.
引用
收藏
页数:10
相关论文
共 75 条
[1]
STUDIES ON E-BEAM DEPOSITED TRANSPARENT CONDUCTIVE FILMS OF IN2O3 - SN AT MODERATE SUBSTRATE TEMPERATURES [J].
AGNIHOTRY, SA ;
SAINI, KK ;
SAXENA, TK ;
NAGPAL, KC ;
CHANDRA, S .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (10) :2087-2096
[2]
ZnO nanoclusters: Synthesis and photoluminescence [J].
Antony, J ;
Chen, XB ;
Morrison, J ;
Bergman, L ;
Qiang, Y ;
McCready, DE ;
Engelhard, MH .
APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3
[3]
IMPURITY TRANSITIONS IN THE PHOTO-LUMINESCENCE SPECTRA OF SNO2 [J].
BLATTNER, G ;
KLINGSHIRN, C ;
HELBIG, R .
SOLID STATE COMMUNICATIONS, 1980, 33 (03) :341-344
[4]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[5]
Room-temperature ultraviolet-emitting In2O3 nanowires [J].
Cao, HQ ;
Qiu, XQ ;
Liang, Y ;
Zhu, QM ;
Zhao, MJ .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :761-763
[6]
Improved photocatalytic activity of Sn4+ doped TiO2 nanoparticulate films prepared by plasma-enhanced chemical vapor deposition [J].
Cao, YA ;
Yang, WS ;
Zhang, WF ;
Liu, GZ ;
Yue, PL .
NEW JOURNAL OF CHEMISTRY, 2004, 28 (02) :218-222
[7]
Low-temperature epitaxial growth of vertical In2O3 nanowires on A-plane sapphire with hexagonal cross-section [J].
Chen, Ching-Jong ;
Xu, Wei-Lun ;
Chern, Ming-Yau .
ADVANCED MATERIALS, 2007, 19 (19) :3012-+
[8]
Characteristics of ultraviolet photoluminescence from high quality tin oxide nanowires [J].
Chen, Rui ;
Xing, G. Z. ;
Gao, J. ;
Zhang, Z. ;
Wu, T. ;
Sun, H. D. .
APPLIED PHYSICS LETTERS, 2009, 95 (06)
[9]
Fabrication and characterization of ITO thin films deposited by excimer laser evaporation [J].
Coutal, C ;
Azema, A ;
Roustan, JC .
THIN SOLID FILMS, 1996, 288 (1-2) :248-253
[10]
Dean J. A., 1992, Lange's Handbook of Chemistry