Characteristics of ultraviolet photoluminescence from high quality tin oxide nanowires

被引：75

作者：

Chen, Rui ^{[1
]}

Xing, G. Z. ^{[1
]}

Gao, J. ^{[1
]}

Zhang, Z. ^{[1
]}

Wu, T. ^{[1
]}

Sun, H. D. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

关键词：

electron-hole recombination; excitons; nanowires; phonons; photoluminescence; quenching (thermal); semiconductor quantum wires; tin compounds; ultraviolet spectra; wide band gap semiconductors; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; VAPOR-DEPOSITION; SNO2; ZNO; NANOSTRUCTURES; LUMINESCENCE; TRANSITIONS; NANOBELTS; EXCITON;

D O I：

10.1063/1.3205122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the optical properties of ultraviolet range emission from high quality tin oxide nanowires prepared by vapor-liquid-solid growth technique. Temperature dependent photoluminescence (PL) measurement is performed between 10 and 300 K. At low temperatures, the PL originates from radiative recombination of excitons bound to neutral donors, donor-acceptor pair transition and their associated longitudinal optical (LO) phonon replicas. The LO-phonon replicas up to third order with Huang-Rhys factor of 0.34 are observed. Evolution of the peaks and the origin of PL thermal quenching at high temperatures are discussed in detail.

引用

页数：3

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