Structural and UV photoluminescence properties of single crystalline SnO2 films grown on α-Al2O3 (0001) by MOCVD

被引：35

作者：

Feng, Xianjin ^{[1
]}

Ma, Jin ^{[1
]}

Yang, Fan ^{[1
]}

Ji, Feng ^{[1
]}

Zong, Fujian ^{[1
]}

Luan, Caina ^{[1
]}

Ma, Honglei ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys & Microelect, Shandong 250100, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 144卷 / 7-8期

基金：

中国国家自然科学基金;

关键词：

SnO2; films; MOCVD; single crystalline; photoluminescence;

D O I：

10.1016/j.ssc.2007.07.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-quality single crystalline SnO2 films have been deposited on alpha-Al2O3 (0001) substrates by metalorganic chemical vapor deposition (MOCVD). The structural and photoluminescence (PL) properties of the SnO2 films were investigated. The prepared samples were epitaxial single crystalline films with the rutile structure of pure SnO2. A single and sharp ultraviolet (UV) PL peak near 331 nm was observed at room temperature (RT). At a temperature of 13 K, two other narrow PL peaks located at 369 and 375 nm as well as a broad feeble peak near 500 nm were observed. The corresponding PL mechanisms were investigated. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：269 / 272

页数：4

共 22 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] IMPURITY TRANSITIONS IN THE PHOTO-LUMINESCENCE SPECTRA OF SNO2 [J].

BLATTNER, G ;

KLINGSHIRN, C ;

HELBIG, R .

SOLID STATE COMMUNICATIONS, 1980, 33 (03) :341-344

[3] Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films [J].

Forleo, A ;

Capone, S ;

Epifani, M ;

Siciliano, P ;

Rella, R .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :744-746

[4] Synthesis and luminescence properties of SnO2 nanoparticles [J].

Gu, F ;

Wang, SF ;

Song, CF ;

Lü, MK ;

Qi, YX ;

Zhou, GJ ;

Xu, D ;

Yuan, DR .

CHEMICAL PHYSICS LETTERS, 2003, 372 (3-4) :451-454

[5] ELECTRICAL AND OPTICAL CHARACTERIZATION OF SBSNO2 [J].

HE, YS ;

CAMPBELL, JC ;

MURPHY, RC ;

ARENDT, MF ;

SWINNEA, JS .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (12) :3131-3134

[6] Laser-ablation growth and optical properties of wide and long single-crystal SnO2 ribbons [J].

Hu, JQ ;

Bando, Y ;

Liu, QL ;

Golberg, D .

ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (06) :493-496

[7] Photoluminescence properties of SnO2 thin films grown by thermal CVD [J].

Jeong, J ;

Choi, SP ;

Chang, CI ;

Shin, DC ;

Park, JS ;

Lee, BT ;

Park, YJ ;

Song, HJ .

SOLID STATE COMMUNICATIONS, 2003, 127 (9-10) :595-597

[8] A novel transparent pn+ junction based on indium tin oxides [J].

Ji, ZG ;

He, ZJ ;

Song, YL ;

Liu, K ;

Xiang, Y .

THIN SOLID FILMS, 2004, 460 (1-2) :324-326

[9] Transparent conducting Sb-doped SnO2 thin films grown by pulsed-laser deposition [J].

Kim, H ;

Piqué, A .

APPLIED PHYSICS LETTERS, 2004, 84 (02) :218-220

[10] Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices [J].

Kim, TW ;

Lee, DU ;

Yoon, YS .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3759-3761

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