Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices

被引：19

作者：

Chen, CH ^{[1
]}

Chen, YF

Shih, A

Lee, SC

Jiang, HX

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1369389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of GaN/Al0.2Ga0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that the A(1)(LO) phonon decreases in frequency with decreasing quantum-well width. The frequency shift is attributed to the effect of phonon zone folding. Through the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices is due to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports. (C) 2001 American Institute of Physics.

引用

页码：3035 / 3037

页数：3

共 24 条

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AZUHATA T, 1995, J PHYS-CONDENS MAT, V7, P129

[2] Resonant Raman scattering in GaN/(AlGa)N single quantum wells [J].