Low-temperature epitaxial growth of vertical In2O3 nanowires on A-plane sapphire with hexagonal cross-section

被引：50

作者：

Chen, Ching-Jong ^{[1
]}

Xu, Wei-Lun ^{[1
]}

Chern, Ming-Yau ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 19期

关键词：

D O I：

10.1002/adma.200602764

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Epitaxial growth of vertical In2O3 (111) nanowires with hexagonal cross-section on a-plane sapphire is reported. The figure showing the vertical wires is viewed at 45 degrees from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low-temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In2O3 nanowires.

引用

页码：3012 / +

页数：5

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