Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

被引:141
作者
Sheu, JK
Su, YK
Chi, GC
Jou, MJ
Chang, CM
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan
[3] Epistar Corp, Hsinchu, Taiwan
关键词
D O I
10.1063/1.121636
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current-voltage (I-V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)-V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 degrees C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing. (C) 1998 American Institute of Physics. [S0003-6951(98)00525-7].
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页码:3317 / 3319
页数:3
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