Impact of domain wall displacements on the dielectric permittivity of epitaxial Ba0.5Sr0.5TiO3 films

被引：11

作者：

Boikov, YA ^{[1
]}

Claeson, T

机构：

[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

[2] Univ Gothenburg, S-41296 Gothenburg, Sweden

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1405147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contributions of ferroelectric domain wall oscillations to the loss factor, tan delta, and the real part of the dielectric permittivity, epsilon ('), of 700 nm thick Ba0.5Sr0.5TiO3 layers were considered. The domain wall related relaxation in the ferroelectric layer exhibited thermally activated behavior with a hindering barrier phi approximate to0.08 eV. The tan delta (T) of the layer peaked and there was a hump anomaly in epsilon'(T) at a temperature where the relaxation rate matched the frequency of measurement. (C) 2001 American Institute of Physics.

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页码：2052 / 2054

页数：3

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