Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance

被引:62
作者
Bhattacharyya, S [1 ]
Vallée, C [1 ]
Cardinaud, C [1 ]
Chauvet, O [1 ]
Turban, G [1 ]
机构
[1] Univ Nantes, CNRS, IMN, LPCM, F-44322 Nantes 3, France
关键词
D O I
10.1063/1.369521
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the variation of the structure and the electronic properties of amorphous nitrogenated carbon films (a-CH:N-x) prepared in dual electron cyclotron resonance-radio-frequency plasma from different mixtures of methane and nitrogen. Electron energy-loss spectroscopy, Auger electron spectroscopy, spectroscopic ellipsometry, and electron-spin-resonance spectroscopy are used to characterize the films. Unlike previous reports, addition of a low percentage (2.3%) of nitrogen in the films induces a strong change in their structure. The variation of electronic properties is rather small for a high concentration of nitrogen. From these experimental studies it seems that the efficiency of nitrogen doping depends on the nitrogen concentration. Modification of structure of the carbon network by nondoping and doping configurations of carbon nitrogen bonds is also emphasized. Our analyses establish an inter-relationship between the structure and electronic properties of nitrogenated carbon films, which helps to understand the structural change occurring in the carbon films with the incorporation of a low amount of nitrogen. (C) 1999 American Institute of Physics. [S0021-8979(99)00204-2].
引用
收藏
页码:2162 / 2169
页数:8
相关论文
共 35 条
  • [1] Determination of the structure of amorphous nitrogenated carbon films by combined Raman and x-ray photoemission spectroscopy
    Bhattacharyya, S
    Hong, J
    Turban, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3917 - 3919
  • [2] Spectroscopic determination of the structure of amorphous nitrogenated carbon films
    Bhattacharyya, S
    Cardinaud, C
    Turban, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) : 4491 - 4500
  • [3] BOUREE JE, 1996, J NON-CRYST SOLIDS 2, V200, P623
  • [4] FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION
    BOUSETTA, A
    LU, M
    BENSAOULA, A
    SCHULTZ, A
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (06) : 696 - 698
  • [5] FORMATION OF C-N THIN-FILMS BY ION-BEAM DEPOSITION
    BOYD, KJ
    MARTON, D
    TODOROV, SS
    ALBAYATI, AH
    KULIK, J
    ZUHR, RA
    RABALAIS, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (04): : 2110 - 2122
  • [6] DEPOSITION AND CHARACTERIZATION OF AMORPHOUS-CARBON NITRIDE THIN-FILMS
    DEMICHELIS, F
    RONG, XF
    SCHREITER, S
    TAGLIAFERRO, A
    DEMARTINO, C
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 361 - 365
  • [7] FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS
    DREVILLON, B
    PERRIN, J
    MARBOT, R
    VIOLET, A
    DALBY, JL
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 969 - 977
  • [8] DREVILLON B, 1989, P SOC PHOTO-OPT INS, V174, P1188
  • [9] ANALYSIS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND GRAIN-BOUNDARIES USING TRANSMISSION ELECTRON-MICROSCOPY AND PARALLEL ELECTRON-ENERGY-LOSS SPECTROSCOPY IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
    FALLON, PJ
    BROWN, LM
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) : 1004 - 1011
  • [10] SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS
    KAUFMAN, JH
    METIN, S
    SAPERSTEIN, DD
    [J]. PHYSICAL REVIEW B, 1989, 39 (18): : 13053 - 13060