Drift mobility and the frequency response of diode connected organic transistors

被引：10

作者：

Cobb, Brian ^{[1
]}

Jeong, Yeon Taek ^{[1
]}

Dodabalapur, Ananth ^{[1
]}

机构：

[1] Univ Texas Austin, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2891877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to characterize the frequency response of an organic field effect transistor (FET) is presented. Analysis then shows a method to calculate the average drift mobility from the frequency at which a pole appears in the response. This pole is believed to appear at the point where charge carriers can no longer fully traverse the channel in one period of the input signal. The dc output characteristics of the device are also described, and saturation mobility values are derived. This saturation mobility and the drift mobility calculated from the frequency response are comparable. This method can be used in determining the drift mobility in other materials such as single nanowires in the FET configuration. (c) 2008 American Institute of Physics.

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页数：3

相关论文

共 21 条

[1] Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor [J].

Basu, Debarshi ;

Wang, Liang ;

Dunn, Lawrence ;

Yoo, Byungwook ;

Nadkarni, Suvid ;

Dodabalapur, Ananth ;

Heeney, Martin ;

McCulloch, Iain .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[2] Pentacene-based radio-frequency identification circuitry [J].

Baude, PF ;

Ender, DA ;

Haase, MA ;

Kelley, TW ;

Muyres, DV ;

Theiss, SD .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966

[3] Organic photovoltaics: technology and market [J].

Brabec, CJ .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 83 (2-3) :273-292

[4] Formation of the accumulation layer in polymer field-effect transistors [J].

Bürgi, L ;

Friend, RH ;

Sirringhaus, H .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1482-1484

[5]

BURNS JR, 1969, RCA REV, V30, P15

[6] Field-effect transistors based on self-organized molecular nanostripes [J].

Cavallini, M ;

Stoliar, P ;

Moulin, JF ;

Surin, M ;

Leclère, P ;

Lazzaroni, R ;

Breiby, DW ;

Andreasen, JW ;

Nielsen, MM ;

Sonar, P ;

Grimsdale, AC ;

Mullen, K ;

Biscarini, F .

NANO LETTERS, 2005, 5 (12) :2422-2425

[7] Design and fabrication of organic complementary circuits [J].

Crone, BK ;

Dodabalapur, A ;

Sarpeshkar, R ;

Filas, RW ;

Lin, YY ;

Bao, Z ;

O'Neill, JH ;

Li, W ;

Katz, HE .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) :5125-5132

[8] Organic field effect transistor mobility from transient response analysis [J].

Dunn, L ;

Basu, D ;

Wang, L ;

Dodabalapur, A .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[9]

Hori T., 1997, GATE DIELECTRICS MOS

[10] Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].

Kobayashi, S ;

Takenobu, T ;

Mori, S ;

Fujiwara, A ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583