Interface characterization of nanocrystalline CdS/Au junction by current-voltage and capacitance-voltage studies

被引：34

作者：

Patel, BK ^{[1
]}

Nanda, KK ^{[1
]}

Sahu, SN ^{[1
]}

机构：

[1] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 07期

关键词：

D O I：

10.1063/1.369731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Schottky junction in the configuration ITO/nano-CdS/Au has been fabricated and the current(I)-voltage(V) and capacitance(C)-voltage(V) characteristics studied. The I-V studies show series resistance effect resulting in two ideality factors: one in low and the other in high forward bias regime, suggesting the presence of surface/interface traps in nano-CdS. Frequency dependent capacitance has also been studied and different semiconductor parameters have been estimated from the I-V and C-V analysis. (C) 1999 American Institute of Physics. [S0021-8979(99)04706-4].

引用

页码：3666 / 3670

页数：5

共 27 条

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