Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications

被引:90
作者
Zhu, Shiyang [1 ]
Yu, M. B. [1 ]
Lo, G. Q. [1 ]
Kwong, D. L. [1 ]
机构
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
关键词
D O I
10.1063/1.2885089
中图分类号
O59 [应用物理学];
学科分类号
摘要
Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi2 layer formed by solid-state Ti-interlayer mediated epitaxy on the top of Si-waveguide absorbs light propagating through the waveguide effectively and exhibits excellent rectifying property on both p-Si and n-Si. NiSi2/p-Si detectors with tapered geometry demonstrate dark current of similar to 3.0 nA at room temperature, responsivity of similar to 4.6 mA/W at wavelengths ranging from 1520 to 1620 nm, and 3 dB bandwidth of similar to 2.0 GHz. The approaches for further improvement in responsivity are addressed. (C) 2008 American Institute of Physics.
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页数:3
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