2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm

被引：51

作者：

Masini, G

Colace, L

Assanto, G

机构：

[1] INFM, Nonlinear Opt & Optoelect Lab, I-00146 Rome, Italy

[2] Univ Roma Tre, I-00146 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 15期

关键词：

D O I：

10.1063/1.1567046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5 mA/W at 1.3 and 1.55 mum, respectively, and dark currents of 1 mA/cm(2), is entirely integrable on standard silicon electronics and is an appealing low-cost candidate for fiber-to-the-home communication networks. (C) 2003 American Institute of Physics.

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页码：2524 / 2526

页数：3

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