Monolithic integration of a SiGe/Si modulator and multiple quantum well photodetector for 1.55 μm operation

被引：15

作者：

Li, BJ ^{[1
]}

Li, GZ

Liu, EK

Jiang, ZM

Qin, J

Wang, X

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[2] Xian Jiao Tong Univ, Dept Microelect Engn, Xian 710049, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The monolithic integration of a SiGe/Si rib waveguide modulator and multiple quantum well photodetector prepared by molecular beam epitaxy is achieved. The low dark current of 49.8 nA at -5 V reverse bias is measured and a modulation depth of 90% at 2.8 V modulation bias is obtained. The external quantum efficiency at lambda = 1.55 mu m is estimated to be 18.2%. (C) 1998 American Institute of Physics. [S0003-6951(98)02550-9].

引用

页码：3504 / 3505

页数：2

共 6 条

[1] Monolithic integration of quantum well infrared photodetector and modulator [J].

Almogy, G ;

Xu, YJ ;

Tong, A ;

Shakouri, A ;

Yariv, A .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2088-2090

[2] SIGE/SI BIFURCATION OPTICAL ACTIVE SWITCH BASED ON PLASMA DISPERSION EFFECT [J].

GAO, Y ;

LI, GZ ;

LIU, XD ;

LIU, EK ;

ZHANG, XJ ;

LU, XK ;

HU, JH ;

WANG, X .

ELECTRONICS LETTERS, 1995, 31 (20) :1740-1741

[3] Electroabsorption and electrooptic effect in SiGe-Si quantum wells: Realization of low-voltage optical modulators [J].

Qasaimeh, O ;

Singh, J ;

Bhattarcharya, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (09) :1532-1536

[4] INTEGRATION OF WAVE-GUIDES AND PHOTODETECTORS IN SIGE FOR 1.3 MU-M OPERATION [J].

SPLETT, A ;

ZINKE, T ;

PETERMANN, K ;

KASPER, E ;

KIBBEL, H ;

HERZOG, HJ ;

PRESTING, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :59-61

[5] LOW-LOSS OPTICAL RIDGE WAVE-GUIDES IN A STRAINED GESI EPITAXIAL LAYER GROWN ON SILICON [J].

SPLETT, A ;

SCHMIDTCHEN, J ;

SCHUPPERT, B ;

PETERMANN, K ;

KASPER, E ;

KIBBEL, H .

ELECTRONICS LETTERS, 1990, 26 (14) :1035-1037

[6] SILICIDE STRAINED SI1-XGEX SCHOTTKY-BARRIER INFRARED DETECTORS [J].

XIAO, X ;

STURM, JC ;

PARIHAR, SR ;

LYON, SA ;

MEYERHOFER, D ;

PALFREY, S ;

SHALLCROSS, FV .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) :199-201

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