SILICIDE STRAINED SI1-XGEX SCHOTTKY-BARRIER INFRARED DETECTORS

被引：59

作者：

XIAO, X ^{[1
]}

STURM, JC ^{[1
]}

PARIHAR, SR ^{[1
]}

LYON, SA ^{[1
]}

MEYERHOFER, D ^{[1
]}

PALFREY, S ^{[1
]}

SHALLCROSS, FV ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.215151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By employing a thin silicon sacrificial cap layer for silicide formation we have successfully demonstrated Pd2Si/strained Si1-xGex Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si1-xGex alloy. The Schottky barrier height of the silicide/strained Si1-xGex detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8 mum in PtSi/Si0.85Ge0.15 detectors. We have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

引用

页码：199 / 201

页数：3

共 14 条

[1] REDUCTION OF THE BARRIER HEIGHT OF SILICIDE/P-SI1-XGEX CONTACT FOR APPLICATION IN AN INFRARED IMAGE SENSOR [J].