Near-infrared photodetectors based on polycrystalline Ge evaporated on Si⟨100⟩ substrates

被引：4

作者：

Masini, G ^{[1
]}

Colace, L ^{[1
]}

Galluzzi, F ^{[1
]}

Assanto, G ^{[1
]}

机构：

[1] Terza Univ Rome, Dept Elect Engn, I-00146 Rome, Italy

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 2000年 / 80卷 / 04期

关键词：

D O I：

10.1080/13642810008209785

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the fabrication of efficient near-infrared photodetectors based on polycrystalline Ge films on Si[100]. In view of integration with Si electronics, metal-semiconductor-metal photodiodes have been realized, for the first time to the best of our knowledge, by low-temperature evaporation. The experiments performed on non-optimized devices indicate a substantial sensitivity at both 1.32 and 1.55 mu m, with a responsivity as high as 16 mA W-1 at 1.32 mu m with 0.2 V bias, and a time response of about 4 ns.

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页码：791 / 797

页数：7

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