GE-SI-SI INFRARED, ZONE-FOLDED SUPERLATTICE DETECTORS

被引：9

作者：

PEARSALL, TP

BEAM, EA

TEMKIN, H

BEAN, JC

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 11期

关键词：

D O I：

10.1049/el:19880464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：685 / 687

页数：3

共 14 条

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[5]

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[6]

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[7] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J].

PEARSALL, TP ;

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :330-332

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].

PEARSALL, TP ;

BEVK, J ;

FELDMAN, LC ;

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OURMAZD, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732

[9] ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS [J].

PEARSALL, TP ;

BEAN, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :308-310

[10]

PEARSALL TP, 1986, 1ST P INT S SI MBE, P400

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